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Unconventional resistive switching behavior in ferroelectric tunnel junctions.
Phys Chem Chem Phys 2015; 17(15):10146-50PC

Abstract

We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices.

Authors+Show Affiliations

School of Materials Science and Engineering, Central South University, Changsha 410083, China.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

25789877

Citation

Mao, H J., et al. "Unconventional Resistive Switching Behavior in Ferroelectric Tunnel Junctions." Physical Chemistry Chemical Physics : PCCP, vol. 17, no. 15, 2015, pp. 10146-50.
Mao HJ, Song C, Xiao LR, et al. Unconventional resistive switching behavior in ferroelectric tunnel junctions. Phys Chem Chem Phys. 2015;17(15):10146-50.
Mao, H. J., Song, C., Xiao, L. R., Gao, S., Cui, B., Peng, J. J., ... Pan, F. (2015). Unconventional resistive switching behavior in ferroelectric tunnel junctions. Physical Chemistry Chemical Physics : PCCP, 17(15), pp. 10146-50. doi:10.1039/c5cp00421g.
Mao HJ, et al. Unconventional Resistive Switching Behavior in Ferroelectric Tunnel Junctions. Phys Chem Chem Phys. 2015 Apr 21;17(15):10146-50. PubMed PMID: 25789877.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Unconventional resistive switching behavior in ferroelectric tunnel junctions. AU - Mao,H J, AU - Song,C, AU - Xiao,L R, AU - Gao,S, AU - Cui,B, AU - Peng,J J, AU - Li,F, AU - Pan,F, PY - 2015/3/20/entrez PY - 2015/3/20/pubmed PY - 2015/3/20/medline SP - 10146 EP - 50 JF - Physical chemistry chemical physics : PCCP JO - Phys Chem Chem Phys VL - 17 IS - 15 N2 - We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices. SN - 1463-9084 UR - https://www.unboundmedicine.com/medline/citation/25789877/Unconventional_resistive_switching_behavior_in_ferroelectric_tunnel_junctions_ L2 - https://doi.org/10.1039/c5cp00421g DB - PRIME DP - Unbound Medicine ER -