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Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device.
Sci Rep. 2015 May 08; 5:10150.SR

Abstract

A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing. Typical synaptic devices based on filamentary resistive switching face severe limitations on the implementation of concurrent inhibitory and excitatory synapses with low conductance and state fluctuation. For overcoming these limitations, we propose a Ta/TaOx/TiO2/Ti device with superior analog synaptic features. A physical simulation based on the homogeneous (nonfilamentary) barrier modulation induced by oxygen ion migration accurately reproduces various DC and AC evolutions of synaptic states, including the spike-timing-dependent plasticity and paired-pulse facilitation. Furthermore, a physics-based compact model for facilitating circuit-level design is proposed on the basis of the general definition of memristor devices. This comprehensive experimental and theoretical study of the promising electronic synapse can facilitate realizing large-scale neuromorphic systems.

Authors+Show Affiliations

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

25955658

Citation

Wang, Yu-Fen, et al. "Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device." Scientific Reports, vol. 5, 2015, p. 10150.
Wang YF, Lin YC, Wang IT, et al. Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device. Sci Rep. 2015;5:10150.
Wang, Y. F., Lin, Y. C., Wang, I. T., Lin, T. P., & Hou, T. H. (2015). Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device. Scientific Reports, 5, 10150. https://doi.org/10.1038/srep10150
Wang YF, et al. Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device. Sci Rep. 2015 May 8;5:10150. PubMed PMID: 25955658.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device. AU - Wang,Yu-Fen, AU - Lin,Yen-Chuan, AU - Wang,I-Ting, AU - Lin,Tzu-Ping, AU - Hou,Tuo-Hung, Y1 - 2015/05/08/ PY - 2015/01/08/received PY - 2015/03/31/accepted PY - 2015/5/9/entrez PY - 2015/5/9/pubmed PY - 2016/3/2/medline SP - 10150 EP - 10150 JF - Scientific reports JO - Sci Rep VL - 5 N2 - A two-terminal analog synaptic device that precisely emulates biological synaptic features is expected to be a critical component for future hardware-based neuromorphic computing. Typical synaptic devices based on filamentary resistive switching face severe limitations on the implementation of concurrent inhibitory and excitatory synapses with low conductance and state fluctuation. For overcoming these limitations, we propose a Ta/TaOx/TiO2/Ti device with superior analog synaptic features. A physical simulation based on the homogeneous (nonfilamentary) barrier modulation induced by oxygen ion migration accurately reproduces various DC and AC evolutions of synaptic states, including the spike-timing-dependent plasticity and paired-pulse facilitation. Furthermore, a physics-based compact model for facilitating circuit-level design is proposed on the basis of the general definition of memristor devices. This comprehensive experimental and theoretical study of the promising electronic synapse can facilitate realizing large-scale neuromorphic systems. SN - 2045-2322 UR - https://www.unboundmedicine.com/medline/citation/25955658/Characterization_and_Modeling_of_Nonfilamentary_Ta/TaOx/TiO2/Ti_Analog_Synaptic_Device_ L2 - http://dx.doi.org/10.1038/srep10150 DB - PRIME DP - Unbound Medicine ER -