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Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films.
Sci Rep 2015; 5:10485SR

Abstract

Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode's surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance.

Authors+Show Affiliations

1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.Department of Physics, University of Suwon, Hawseong, Gyunggi-do 445-743, Republic of Korea.1] Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea [2] Department of Physics and Astronomy, Seoul National University (SNU), Seoul 151-742, Republic of Korea.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

26014521

Citation

Shin, Y J., et al. "Suppression of Creep-regime Dynamics in Epitaxial Ferroelectric BiFeO3 Films." Scientific Reports, vol. 5, 2015, p. 10485.
Shin YJ, Jeon BC, Yang SM, et al. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films. Sci Rep. 2015;5:10485.
Shin, Y. J., Jeon, B. C., Yang, S. M., Hwang, I., Cho, M. R., Sando, D., ... Noh, T. W. (2015). Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films. Scientific Reports, 5, p. 10485. doi:10.1038/srep10485.
Shin YJ, et al. Suppression of Creep-regime Dynamics in Epitaxial Ferroelectric BiFeO3 Films. Sci Rep. 2015 May 27;5:10485. PubMed PMID: 26014521.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films. AU - Shin,Y J, AU - Jeon,B C, AU - Yang,S M, AU - Hwang,I, AU - Cho,M R, AU - Sando,D, AU - Lee,S R, AU - Yoon,J-G, AU - Noh,T W, Y1 - 2015/05/27/ PY - 2015/03/20/received PY - 2015/04/13/accepted PY - 2015/5/28/entrez PY - 2015/5/28/pubmed PY - 2015/5/28/medline SP - 10485 EP - 10485 JF - Scientific reports JO - Sci Rep VL - 5 N2 - Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode's surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. SN - 2045-2322 UR - https://www.unboundmedicine.com/medline/citation/26014521/Suppression_of_creep_regime_dynamics_in_epitaxial_ferroelectric_BiFeO3_films_ L2 - http://dx.doi.org/10.1038/srep10485 DB - PRIME DP - Unbound Medicine ER -