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Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs.
Front Neurosci 2015; 9:227FN

Abstract

Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals. In this paper, we investigate spike-timing dependent plasticity (STDP) with a single pairing of one presynaptic voltage spike and one post-synaptic voltage spike in a BiFeO3 memristive device. In most memristive materials the learning window is primarily a function of the material characteristics and not of the applied waveform. In contrast, we show that the analog resistive switching of the developed artificial synapses allows to adjust the learning time constant of the STDP function from 25 ms to 125 μs via the duration of applied voltage spikes. Also, as the induced weight change may degrade, we investigate the remanence of the resistance change for several hours after analog resistive switching, thus emulating the processes expected in biological synapses. As the power consumption is a major constraint in neuromorphic circuits, we show methods to reduce the consumed energy per setting pulse to only 4.5 pJ in the developed artificial synapses.

Authors+Show Affiliations

Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany.Neuromorphic Cognitive Systems Group, Institute of Neuroinformatics, University of Zurich and ETH Zurich Zurich, Switzerland.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany ; Semiconductor Materials, Institute of Ion Beam Physics and Materials Research, HZDR Innovation GmbH Dresden, Germany.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany ; Institute for Integrative Nanosciences, IFW Dresden Dresden, Germany.Material Systems for Nanoelectronics, Faculty of Electrical and Information Engineering, Chemnitz University of Technology Chemnitz, Germany.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

26175666

Citation

Du, Nan, et al. "Single Pairing Spike-timing Dependent Plasticity in BiFeO3 Memristors With a Time Window of 25 Ms to 125 Μs." Frontiers in Neuroscience, vol. 9, 2015, p. 227.
Du N, Kiani M, Mayr CG, et al. Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs. Front Neurosci. 2015;9:227.
Du, N., Kiani, M., Mayr, C. G., You, T., Bürger, D., Skorupa, I., ... Schmidt, H. (2015). Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs. Frontiers in Neuroscience, 9, p. 227. doi:10.3389/fnins.2015.00227.
Du N, et al. Single Pairing Spike-timing Dependent Plasticity in BiFeO3 Memristors With a Time Window of 25 Ms to 125 Μs. Front Neurosci. 2015;9:227. PubMed PMID: 26175666.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs. AU - Du,Nan, AU - Kiani,Mahdi, AU - Mayr,Christian G, AU - You,Tiangui, AU - Bürger,Danilo, AU - Skorupa,Ilona, AU - Schmidt,Oliver G, AU - Schmidt,Heidemarie, Y1 - 2015/06/30/ PY - 2015/02/19/received PY - 2015/06/11/accepted PY - 2015/7/16/entrez PY - 2015/7/16/pubmed PY - 2015/7/16/medline KW - BiFeO3 memristor KW - artificial synapse KW - learning window KW - low-power device KW - memory consolidation KW - single pairing STDP SP - 227 EP - 227 JF - Frontiers in neuroscience JO - Front Neurosci VL - 9 N2 - Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals. In this paper, we investigate spike-timing dependent plasticity (STDP) with a single pairing of one presynaptic voltage spike and one post-synaptic voltage spike in a BiFeO3 memristive device. In most memristive materials the learning window is primarily a function of the material characteristics and not of the applied waveform. In contrast, we show that the analog resistive switching of the developed artificial synapses allows to adjust the learning time constant of the STDP function from 25 ms to 125 μs via the duration of applied voltage spikes. Also, as the induced weight change may degrade, we investigate the remanence of the resistance change for several hours after analog resistive switching, thus emulating the processes expected in biological synapses. As the power consumption is a major constraint in neuromorphic circuits, we show methods to reduce the consumed energy per setting pulse to only 4.5 pJ in the developed artificial synapses. SN - 1662-4548 UR - https://www.unboundmedicine.com/medline/citation/26175666/Single_pairing_spike_timing_dependent_plasticity_in_BiFeO3_memristors_with_a_time_window_of_25_ms_to_125_μs_ L2 - https://doi.org/10.3389/fnins.2015.00227 DB - PRIME DP - Unbound Medicine ER -