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Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.
Sensors (Basel) 2015; 15(8):20305-15S

Abstract

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Authors+Show Affiliations

Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany. ha-duong.ngo@izm.fraunhofer.de. University of Applied Sciences, FB I, Microsystems Engineering, Berlin 12459, Germany. ha-duong.ngo@izm.fraunhofer.de.Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany. Biswajit.Mukhopadhyay@izm.fraunhofer.de.Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany. Oswin.Ehrmann@izm.fraunhofer.de.Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany. kdlang@izm.fraunhofer.de.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

26295235

Citation

Ngo, Ha-Duong, et al. "Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments." Sensors (Basel, Switzerland), vol. 15, no. 8, 2015, pp. 20305-15.
Ngo HD, Mukhopadhyay B, Ehrmann O, et al. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments. Sensors (Basel). 2015;15(8):20305-15.
Ngo, H. D., Mukhopadhyay, B., Ehrmann, O., & Lang, K. D. (2015). Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments. Sensors (Basel, Switzerland), 15(8), pp. 20305-15. doi:10.3390/s150820305.
Ngo HD, et al. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments. Sensors (Basel). 2015 Aug 18;15(8):20305-15. PubMed PMID: 26295235.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments. AU - Ngo,Ha-Duong, AU - Mukhopadhyay,Biswaijit, AU - Ehrmann,Oswin, AU - Lang,Klaus-Dieter, Y1 - 2015/08/18/ PY - 2015/05/19/received PY - 2015/07/29/revised PY - 2015/08/06/accepted PY - 2015/8/22/entrez PY - 2015/8/22/pubmed PY - 2016/2/16/medline KW - MEMS KW - SOI-based sensors KW - sensors for high temperature KW - sensors for harsh environment SP - 20305 EP - 15 JF - Sensors (Basel, Switzerland) JO - Sensors (Basel) VL - 15 IS - 8 N2 - In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA. SN - 1424-8220 UR - https://www.unboundmedicine.com/medline/citation/26295235/Advanced_Liquid_Free_Piezoresistive_SOI_Based_Pressure_Sensors_for_Measurements_in_Harsh_Environments_ L2 - http://www.mdpi.com/resolver?pii=s150820305 DB - PRIME DP - Unbound Medicine ER -