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Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature.
J Colloid Interface Sci 2015; 460:135-45JC

Abstract

Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. GaN NWs were fabricated via chemical vapor deposition (CVD) route. Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm. The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75°C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature.

Authors+Show Affiliations

Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, USM, 11800 Penang, Malaysia; Physics Department, Collage of Pure Science, Tikrit University, Iraq. Electronic address: qnabbdullah@gmail.com.Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, USM, 11800 Penang, Malaysia.Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, USM, 11800 Penang, Malaysia.Nanotechnology Centre, University of Bahrain, PO Box 32038, Bahrain; Department of Physics, College of Science, PO Box 32038, Bahrain.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

26319330

Citation

Abdullah, Q N., et al. "Pt-decorated GaN Nanowires With Significant Improvement in H2 Gas-sensing Performance at Room Temperature." Journal of Colloid and Interface Science, vol. 460, 2015, pp. 135-45.
Abdullah QN, Yam FK, Hassan Z, et al. Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. J Colloid Interface Sci. 2015;460:135-45.
Abdullah, Q. N., Yam, F. K., Hassan, Z., & Bououdina, M. (2015). Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. Journal of Colloid and Interface Science, 460, pp. 135-45. doi:10.1016/j.jcis.2015.07.048.
Abdullah QN, et al. Pt-decorated GaN Nanowires With Significant Improvement in H2 Gas-sensing Performance at Room Temperature. J Colloid Interface Sci. 2015 Dec 15;460:135-45. PubMed PMID: 26319330.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. AU - Abdullah,Q N, AU - Yam,F K, AU - Hassan,Z, AU - Bououdina,M, Y1 - 2015/07/21/ PY - 2015/05/06/received PY - 2015/07/12/revised PY - 2015/07/21/accepted PY - 2015/8/31/entrez PY - 2015/9/1/pubmed PY - 2015/9/1/medline KW - GaN KW - NWs KW - Pt KW - Response KW - Sensor SP - 135 EP - 45 JF - Journal of colloid and interface science JO - J Colloid Interface Sci VL - 460 N2 - Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. GaN NWs were fabricated via chemical vapor deposition (CVD) route. Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm. The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75°C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature. SN - 1095-7103 UR - https://www.unboundmedicine.com/medline/citation/26319330/Pt_decorated_GaN_nanowires_with_significant_improvement_in_H2_gas_sensing_performance_at_room_temperature_ L2 - https://linkinghub.elsevier.com/retrieve/pii/S0021-9797(15)30067-9 DB - PRIME DP - Unbound Medicine ER -