TY - JOUR T1 - Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. AU - Arnold,Heather N, AU - Cress,Cory D, AU - McMorrow,Julian J, AU - Schmucker,Scott W, AU - Sangwan,Vinod K, AU - Jaber-Ansari,Laila, AU - Kumar,Rajan, AU - Puntambekar,Kanan P, AU - Luck,Kyle A, AU - Marks,Tobin J, AU - Hersam,Mark C, Y1 - 2016/02/18/ PY - 2016/2/17/entrez PY - 2016/2/18/pubmed PY - 2016/2/18/medline KW - chemical vapor deposition graphene KW - field-effect transistor KW - hybrid dielectrics KW - low-voltage electronics KW - radiation effects KW - total ionizing dose SP - 5058 EP - 64 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 8 IS - 8 N2 - Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm(2). The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/26882215/Tunable_Radiation_Response_in_Hybrid_Organic_Inorganic_Gate_Dielectrics_for_Low_Voltage_Graphene_Electronics_ L2 - https://doi.org/10.1021/acsami.5b12259 DB - PRIME DP - Unbound Medicine ER -