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Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers.
Nano Lett 2016; 16(6):3911-8NL

Abstract

Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for nonvolatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials. However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, adding a new direction to FTJ research, we fabricated FTJs with BaTiO3 single barriers (SB-FTJs) and BaTiO3/SrTiO3 composite barriers (CB-FTJs) and reported a systematic study of FTJ performances by varying the barrier thicknesses and compositions. For the SB-FTJs, the TER is limited by pronounced leakage current for ultrathin barriers and extremely small tunneling current for thick barriers. For the CB-FTJs, the extra SrTiO3 barrier provides an additional degree of freedom to modulate the barrier potential and tunneling behavior. The resultant high tunability can be utilized to overcome the barrier thickness limits and enhance the overall CB-FTJ performances beyond those of SB-FTJ. Our results reveal a new paradigm to manipulate the FTJs through designing multilayer tunneling barriers with hybrid functionalities.

Authors+Show Affiliations

Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.Department of Physics, University of Suwon , Hwaseong, Gyunggi-do 445-743, Republic of Korea.Department of Physics, Soongsil University , Seoul 156-743, Republic of Korea.Center for Correlated Electron Systems, Institute for Basic Science (IBS) , Seoul 151-747, Republic of Korea. Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

27195918

Citation

Wang, Lingfei, et al. "Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions Through BaTiO3/SrTiO3 Composite Barriers." Nano Letters, vol. 16, no. 6, 2016, pp. 3911-8.
Wang L, Cho MR, Shin YJ, et al. Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers. Nano Lett. 2016;16(6):3911-8.
Wang, L., Cho, M. R., Shin, Y. J., Kim, J. R., Das, S., Yoon, J. G., ... Noh, T. W. (2016). Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers. Nano Letters, 16(6), pp. 3911-8. doi:10.1021/acs.nanolett.6b01418.
Wang L, et al. Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions Through BaTiO3/SrTiO3 Composite Barriers. Nano Lett. 2016 06 8;16(6):3911-8. PubMed PMID: 27195918.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers. AU - Wang,Lingfei, AU - Cho,Myung Rae, AU - Shin,Yeong Jae, AU - Kim,Jeong Rae, AU - Das,Saikat, AU - Yoon,Jong-Gul, AU - Chung,Jin-Seok, AU - Noh,Tae Won, Y1 - 2016/05/24/ PY - 2016/5/20/entrez PY - 2016/5/20/pubmed PY - 2016/5/20/medline KW - Ultrathin ferroelectric film KW - composite barrier KW - ferroelectric tunnel junction KW - pulsed laser epitaxy KW - tunneling electroresistance SP - 3911 EP - 8 JF - Nano letters JO - Nano Lett. VL - 16 IS - 6 N2 - Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for nonvolatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials. However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, adding a new direction to FTJ research, we fabricated FTJs with BaTiO3 single barriers (SB-FTJs) and BaTiO3/SrTiO3 composite barriers (CB-FTJs) and reported a systematic study of FTJ performances by varying the barrier thicknesses and compositions. For the SB-FTJs, the TER is limited by pronounced leakage current for ultrathin barriers and extremely small tunneling current for thick barriers. For the CB-FTJs, the extra SrTiO3 barrier provides an additional degree of freedom to modulate the barrier potential and tunneling behavior. The resultant high tunability can be utilized to overcome the barrier thickness limits and enhance the overall CB-FTJ performances beyond those of SB-FTJ. Our results reveal a new paradigm to manipulate the FTJs through designing multilayer tunneling barriers with hybrid functionalities. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/27195918/Overcoming_the_Fundamental_Barrier_Thickness_Limits_of_Ferroelectric_Tunnel_Junctions_through_BaTiO3/SrTiO3_Composite_Barriers_ L2 - https://dx.doi.org/10.1021/acs.nanolett.6b01418 DB - PRIME DP - Unbound Medicine ER -