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Microwave a.c. conductivity of domain walls in ferroelectric thin films.
Nat Commun 2016; 7:11630NC

Abstract

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

Authors+Show Affiliations

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.State Key Laboratory for Low-Dimensional Quantum Physics, Department of Physics and Collaborative Innovation Center for Quantum Matter, Tsinghua University, Beijing 100084, China. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA.Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

27240997

Citation

Tselev, Alexander, et al. "Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films." Nature Communications, vol. 7, 2016, p. 11630.
Tselev A, Yu P, Cao Y, et al. Microwave a.c. conductivity of domain walls in ferroelectric thin films. Nat Commun. 2016;7:11630.
Tselev, A., Yu, P., Cao, Y., Dedon, L. R., Martin, L. W., Kalinin, S. V., & Maksymovych, P. (2016). Microwave a.c. conductivity of domain walls in ferroelectric thin films. Nature Communications, 7, p. 11630. doi:10.1038/ncomms11630.
Tselev A, et al. Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films. Nat Commun. 2016 05 31;7:11630. PubMed PMID: 27240997.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Microwave a.c. conductivity of domain walls in ferroelectric thin films. AU - Tselev,Alexander, AU - Yu,Pu, AU - Cao,Ye, AU - Dedon,Liv R, AU - Martin,Lane W, AU - Kalinin,Sergei V, AU - Maksymovych,Petro, Y1 - 2016/05/31/ PY - 2016/02/04/received PY - 2016/04/14/accepted PY - 2016/6/1/entrez PY - 2016/6/1/pubmed PY - 2016/6/1/medline SP - 11630 EP - 11630 JF - Nature communications JO - Nat Commun VL - 7 N2 - Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. SN - 2041-1723 UR - https://www.unboundmedicine.com/medline/citation/27240997/Microwave_a_c__conductivity_of_domain_walls_in_ferroelectric_thin_films_ L2 - http://dx.doi.org/10.1038/ncomms11630 DB - PRIME DP - Unbound Medicine ER -