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Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.
Adv Mater 2016; 28(32):6852-9AM

Abstract

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

Authors+Show Affiliations

NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

27248832

Citation

Qin, Qi Hang, et al. "Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions With Ionic Interfaces." Advanced Materials (Deerfield Beach, Fla.), vol. 28, no. 32, 2016, pp. 6852-9.
Qin QH, Äkäslompolo L, Tuomisto N, et al. Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces. Adv Mater Weinheim. 2016;28(32):6852-9.
Qin, Q. H., Äkäslompolo, L., Tuomisto, N., Yao, L., Majumdar, S., Vijayakumar, J., ... van Dijken, S. (2016). Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces. Advanced Materials (Deerfield Beach, Fla.), 28(32), pp. 6852-9. doi:10.1002/adma.201504519.
Qin QH, et al. Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions With Ionic Interfaces. Adv Mater Weinheim. 2016;28(32):6852-9. PubMed PMID: 27248832.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces. AU - Qin,Qi Hang, AU - Äkäslompolo,Laura, AU - Tuomisto,Noora, AU - Yao,Lide, AU - Majumdar,Sayani, AU - Vijayakumar,Jaianth, AU - Casiraghi,Arianna, AU - Inkinen,Sampo, AU - Chen,Binbin, AU - Zugarramurdi,Asier, AU - Puska,Martti, AU - van Dijken,Sebastiaan, Y1 - 2016/06/01/ PY - 2015/09/14/received PY - 2016/02/03/revised PY - 2016/6/2/entrez PY - 2016/6/2/pubmed PY - 2016/6/2/medline KW - Tsu-Esaki tunneling current formula KW - ferroelectric tunnel junctions KW - oxygen vacancy migration KW - resistive switching KW - transition metal oxides SP - 6852 EP - 9 JF - Advanced materials (Deerfield Beach, Fla.) JO - Adv. Mater. Weinheim VL - 28 IS - 32 N2 - Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K. SN - 1521-4095 UR - https://www.unboundmedicine.com/medline/citation/27248832/Resistive_Switching_in_All_Oxide_Ferroelectric_Tunnel_Junctions_with_Ionic_Interfaces_ L2 - https://doi.org/10.1002/adma.201504519 DB - PRIME DP - Unbound Medicine ER -