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Controlled creation and displacement of charged domain walls in ferroelectric thin films.
Sci Rep 2016; 6:31323SR

Abstract

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes. We demonstrate that ferroelectric switching is accompanied - without exception - by the appearance of charged domain walls and that these walls can be displaced and erased reliably. We ascertain from a combination of scanning probe microscopy, transmission electron microscopy and phase field simulations that creation of charged domain walls is a by-product of, and as such is always coupled to, ferroelectric switching. This is due to the (110) orientation of the tetragonal (Pb,Sr)TiO3 thin films and the crucial role played by the limited conduction of the LSMO bottom electrode layer used in this study. This work highlights that charged domain walls, far from being exotic, unstable structures, as might have been assumed previously, can be robust, stable easily-controlled features in ferroelectric thin films.

Authors+Show Affiliations

Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland. Institute for Photon Science and Synchrotron Radiation, KIT - Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany.Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland.Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland.Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland.Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland.Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

27507433

Citation

Feigl, L, et al. "Controlled Creation and Displacement of Charged Domain Walls in Ferroelectric Thin Films." Scientific Reports, vol. 6, 2016, p. 31323.
Feigl L, Sluka T, McGilly LJ, et al. Controlled creation and displacement of charged domain walls in ferroelectric thin films. Sci Rep. 2016;6:31323.
Feigl, L., Sluka, T., McGilly, L. J., Crassous, A., Sandu, C. S., & Setter, N. (2016). Controlled creation and displacement of charged domain walls in ferroelectric thin films. Scientific Reports, 6, p. 31323. doi:10.1038/srep31323.
Feigl L, et al. Controlled Creation and Displacement of Charged Domain Walls in Ferroelectric Thin Films. Sci Rep. 2016 08 10;6:31323. PubMed PMID: 27507433.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Controlled creation and displacement of charged domain walls in ferroelectric thin films. AU - Feigl,L, AU - Sluka,T, AU - McGilly,L J, AU - Crassous,A, AU - Sandu,C S, AU - Setter,N, Y1 - 2016/08/10/ PY - 2016/04/28/received PY - 2016/07/18/accepted PY - 2016/8/11/entrez PY - 2016/8/11/pubmed PY - 2016/8/11/medline SP - 31323 EP - 31323 JF - Scientific reports JO - Sci Rep VL - 6 N2 - Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes. We demonstrate that ferroelectric switching is accompanied - without exception - by the appearance of charged domain walls and that these walls can be displaced and erased reliably. We ascertain from a combination of scanning probe microscopy, transmission electron microscopy and phase field simulations that creation of charged domain walls is a by-product of, and as such is always coupled to, ferroelectric switching. This is due to the (110) orientation of the tetragonal (Pb,Sr)TiO3 thin films and the crucial role played by the limited conduction of the LSMO bottom electrode layer used in this study. This work highlights that charged domain walls, far from being exotic, unstable structures, as might have been assumed previously, can be robust, stable easily-controlled features in ferroelectric thin films. SN - 2045-2322 UR - https://www.unboundmedicine.com/medline/citation/27507433/Controlled_creation_and_displacement_of_charged_domain_walls_in_ferroelectric_thin_films_ L2 - http://dx.doi.org/10.1038/srep31323 DB - PRIME DP - Unbound Medicine ER -