Tags

Type your tag names separated by a space and hit enter

Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures.
ACS Appl Mater Interfaces 2016; 8(48):32948-32955AA

Abstract

In this work, epitaxial Pb(Zr0.4Ti0.6)O3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.

Authors+Show Affiliations

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China.No affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

27934147

Citation

Bai, Yu, et al. "Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures." ACS Applied Materials & Interfaces, vol. 8, no. 48, 2016, pp. 32948-32955.
Bai Y, Wang ZJ, Chen YN, et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures. ACS Appl Mater Interfaces. 2016;8(48):32948-32955.
Bai, Y., Wang, Z. J., Chen, Y. N., & Cui, J. Z. (2016). Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures. ACS Applied Materials & Interfaces, 8(48), pp. 32948-32955.
Bai Y, et al. Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures. ACS Appl Mater Interfaces. 2016 Dec 7;8(48):32948-32955. PubMed PMID: 27934147.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures. AU - Bai,Yu, AU - Wang,Zhan Jie, AU - Chen,Yan Na, AU - Cui,Jian Zhong, Y1 - 2016/11/18/ PY - 2016/12/10/entrez PY - 2016/12/10/pubmed PY - 2016/12/10/medline KW - ON/OFF ratio KW - ferroelectric heterostructures KW - ferroelectric polarization KW - interfacial built-in field KW - resistive switching behaviors SP - 32948 EP - 32955 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 8 IS - 48 N2 - In this work, epitaxial Pb(Zr0.4Ti0.6)O3 (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO3 (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/27934147/Resistive_Switching_and_Modulation_of_Pb_Zr0_4Ti0_6_O3/Nb:SrTiO3_Heterostructures_ L2 - https://dx.doi.org/10.1021/acsami.6b10992 DB - PRIME DP - Unbound Medicine ER -