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Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions.
Nano Lett 2017; 17(2):922-927NL

Abstract

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Authors+Show Affiliations

No affiliation info availableNo affiliation info availableNo affiliation info availableMaterials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.Kurnakov Institute for General and Inorganic Chemistry, Russian Academy of Sciences , 119991 Moscow, Russia. Saint Petersburg State University , 190000 St. Petersburg, Russia.No affiliation info availableInstitute of Materials Science, Technische Universität Darmstadt , D-64287 Darmstadt, Germany.Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Research Support, Non-U.S. Gov't
Letter

Language

eng

PubMed ID

28094991

Citation

Li, Tao, et al. "Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions." Nano Letters, vol. 17, no. 2, 2017, pp. 922-927.
Li T, Sharma P, Lipatov A, et al. Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. Nano Lett. 2017;17(2):922-927.
Li, T., Sharma, P., Lipatov, A., Lee, H., Lee, J. W., Zhuravlev, M. Y., ... Gruverman, A. (2017). Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. Nano Letters, 17(2), pp. 922-927. doi:10.1021/acs.nanolett.6b04247.
Li T, et al. Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. Nano Lett. 2017 02 8;17(2):922-927. PubMed PMID: 28094991.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. AU - Li,Tao, AU - Sharma,Pankaj, AU - Lipatov,Alexey, AU - Lee,Hyungwoo, AU - Lee,Jung-Woo, AU - Zhuravlev,Mikhail Y, AU - Paudel,Tula R, AU - Genenko,Yuri A, AU - Eom,Chang-Beom, AU - Tsymbal,Evgeny Y, AU - Sinitskii,Alexander, AU - Gruverman,Alexei, Y1 - 2017/01/20/ PY - 2017/1/18/pubmed PY - 2017/1/18/medline PY - 2017/1/18/entrez KW - 2D materials KW - MoS2 KW - Resistive switching KW - ferroelectric tunnel junctions SP - 922 EP - 927 JF - Nano letters JO - Nano Lett. VL - 17 IS - 2 N2 - Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/28094991/Polarization_Mediated_Modulation_of_Electronic_and_Transport_Properties_of_Hybrid_MoS2_BaTiO3_SrRuO3_Tunnel_Junctions_ L2 - https://dx.doi.org/10.1021/acs.nanolett.6b04247 DB - PRIME DP - Unbound Medicine ER -