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Nonvolatile ferroelectric domain wall memory.
Sci Adv 2017; 3(6):e1700512SA

Abstract

Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to "domain wall nanoelectronics," a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (~103) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices.

Authors+Show Affiliations

School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia.School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia.School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia.Department of Aerospace and Mechanical Engineering, Saint Louis University, St. Louis, MO 63103, USA.School of Materials Science and Engineering and Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, China.Department of Mechanical Engineering, University of Washington, Seattle, WA 98195-2600, USA. Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, China.School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia.School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

28691100

Citation

Sharma, Pankaj, et al. "Nonvolatile Ferroelectric Domain Wall Memory." Science Advances, vol. 3, no. 6, 2017, pp. e1700512.
Sharma P, Zhang Q, Sando D, et al. Nonvolatile ferroelectric domain wall memory. Sci Adv. 2017;3(6):e1700512.
Sharma, P., Zhang, Q., Sando, D., Lei, C. H., Liu, Y., Li, J., ... Seidel, J. (2017). Nonvolatile ferroelectric domain wall memory. Science Advances, 3(6), pp. e1700512. doi:10.1126/sciadv.1700512.
Sharma P, et al. Nonvolatile Ferroelectric Domain Wall Memory. Sci Adv. 2017;3(6):e1700512. PubMed PMID: 28691100.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Nonvolatile ferroelectric domain wall memory. AU - Sharma,Pankaj, AU - Zhang,Qi, AU - Sando,Daniel, AU - Lei,Chi Hou, AU - Liu,Yunya, AU - Li,Jiangyu, AU - Nagarajan,Valanoor, AU - Seidel,Jan, Y1 - 2017/06/23/ PY - 2017/02/15/received PY - 2017/05/05/accepted PY - 2017/7/11/entrez PY - 2017/7/12/pubmed PY - 2017/7/12/medline KW - domain walls KW - ferroelectrics KW - memory SP - e1700512 EP - e1700512 JF - Science advances JO - Sci Adv VL - 3 IS - 6 N2 - Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to "domain wall nanoelectronics," a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (~103) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices. SN - 2375-2548 UR - https://www.unboundmedicine.com/medline/citation/28691100/Nonvolatile_ferroelectric_domain_wall_memory_ L2 - https://www.ncbi.nlm.nih.gov/pmc/articles/pmid/28691100/ DB - PRIME DP - Unbound Medicine ER -