ZnO Electrode for High Temperature SAW Sensors.
Materials (Basel). 2017 Jan 16; 10(1)M

Abstract

In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors.

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Authors+Show Affiliations

Liu X

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. tadyliu@outlook.com.

Peng B

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. bpeng@uestc.edu.cn.

Zhang W

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. wlzhang@uestc.edu.cn.

Zhu J

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. junzhu@uestc.edu.cn.

Liu X

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. xzliu@uestc.edu.cn.

Wei M

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. wm2lzx1314@hotmail.com.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

28772429

Citation

Liu, Xingpeng, et al. "Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors." Materials (Basel, Switzerland), vol. 10, no. 1, 2017.

Liu X, Peng B, Zhang W, et al. Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors. Materials (Basel). 2017;10(1).

Liu, X., Peng, B., Zhang, W., Zhu, J., Liu, X., & Wei, M. (2017). Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors. Materials (Basel, Switzerland), 10(1). https://doi.org/10.3390/ma10010069

Liu X, et al. Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors. Materials (Basel). 2017 Jan 16;10(1) PubMed PMID: 28772429.

* Article titles in AMA citation format should be in sentence-case

TY - JOUR T1 - Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors. AU - Liu,Xingpeng, AU - Peng,Bin, AU - Zhang,Wanli, AU - Zhu,Jun, AU - Liu,Xingzhao, AU - Wei,Meng, Y1 - 2017/01/16/ PY - 2016/11/07/received PY - 2016/12/26/revised PY - 2017/01/09/accepted PY - 2017/8/5/entrez PY - 2017/8/5/pubmed PY - 2017/8/5/medline KW - SAW sensor KW - electrical resistance KW - high temperature electrode KW - langasite JF - Materials (Basel, Switzerland) JO - Materials (Basel) VL - 10 IS - 1 N2 - In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors. SN - 1996-1944 UR - https://www.unboundmedicine.com/medline/citation/28772429/Novel_AlN/Pt/ZnO_Electrode_for_High_Temperature_SAW_Sensors_ L2 - https://www.mdpi.com/resolver?pii=ma10010069 DB - PRIME DP - Unbound Medicine ER -

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Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors.Materials (Basel). 2017 Jan 16; 10(1)M