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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.
Materials (Basel). 2015 Oct 12; 8(10):6926-6934.M

Abstract

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm²/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Authors+Show Affiliations

Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Korea. jaekyun.kim@gmail.com.School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea. wanfe89@gmail.com.School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea. rudals219@naver.com.Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701, Korea. mchoi@konkuk.ac.kr.School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea. skpark@cau.ac.kr.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

28793608

Citation

Kim, Jaekyun, et al. "Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors." Materials (Basel, Switzerland), vol. 8, no. 10, 2015, pp. 6926-6934.
Kim J, Park CJ, Yi G, et al. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. Materials (Basel). 2015;8(10):6926-6934.
Kim, J., Park, C. J., Yi, G., Choi, M. S., & Park, S. K. (2015). Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. Materials (Basel, Switzerland), 8(10), 6926-6934. https://doi.org/10.3390/ma8105352
Kim J, et al. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. Materials (Basel). 2015 Oct 12;8(10):6926-6934. PubMed PMID: 28793608.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors. AU - Kim,Jaekyun, AU - Park,Chang Jun, AU - Yi,Gyeongmin, AU - Choi,Myung-Seok, AU - Park,Sung Kyu, Y1 - 2015/10/12/ PY - 2015/08/27/received PY - 2015/09/23/revised PY - 2015/10/08/accepted PY - 2017/8/11/entrez PY - 2015/10/12/pubmed PY - 2015/10/12/medline KW - gate dielectric layer KW - low-temperature sol-gel method KW - low-voltage operation KW - organic thin film transistor KW - photochemical activation KW - self-assembled monolayer SP - 6926 EP - 6934 JF - Materials (Basel, Switzerland) JO - Materials (Basel) VL - 8 IS - 10 N2 - A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm²/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages. SN - 1996-1944 UR - https://www.unboundmedicine.com/medline/citation/28793608/Low_Temperature_Solution_Processed_Gate_Dielectrics_for_High_Performance_Organic_Thin_Film_Transistors_ L2 - https://www.mdpi.com/resolver?pii=ma8105352 DB - PRIME DP - Unbound Medicine ER -
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