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High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film.
ACS Appl Mater Interfaces. 2017 Oct 25; 9(42):36989-36996.AA

Abstract

The theoretical and practical realization of memristive devices has been hailed as the next step for nonvolatile memories, low-power remote sensing, and adaptive intelligent prototypes for neuromorphic and biological systems. However, the active materials of currently available memristors need to undergo an often destructive high-bias electroforming process in order to activate resistive switching. This limits their device performance in switching speed, endurance/retention, and power consumption upon high-density integration, due to excessive Joule heating. By employing a nanocrystalline oxygen-deficient TiOx switching matrix to localize the electric field at discrete locations, it is possible to resolve the Joule heating problem by reducing the need for electroforming at high bias. With a Pt/TiOx/Pt stacking architecture, our device follows an electric field driven, vacancy-modulated interface-type switching that is sensitive to the junction size. By scaling down the junction size, the SET voltage and output current can be reduced, and a SET voltage as low as +0.59 V can be obtained for a 5 × 5 μm2 junction size. Along with its potentially fast switching (over 105 cycles with a 100 μs voltage pulse) and high retention (over 105 s) performance, memristors based on these disordered oxygen-deficient TiOx films promise viable building blocks for next-generation nonvolatile memories and other logic circuit systems.

Authors+Show Affiliations

WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L3G1, Canada.WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L3G1, Canada.WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L3G1, Canada.WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L3G1, Canada.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

28975787

Citation

Srivastava, Saurabh, et al. "High-Performance Single-Active-Layer Memristor Based On an Ultrananocrystalline Oxygen-Deficient TiOx Film." ACS Applied Materials & Interfaces, vol. 9, no. 42, 2017, pp. 36989-36996.
Srivastava S, Thomas JP, Heinig NF, et al. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film. ACS Appl Mater Interfaces. 2017;9(42):36989-36996.
Srivastava, S., Thomas, J. P., Heinig, N. F., & Leung, K. T. (2017). High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film. ACS Applied Materials & Interfaces, 9(42), 36989-36996. https://doi.org/10.1021/acsami.7b07971
Srivastava S, et al. High-Performance Single-Active-Layer Memristor Based On an Ultrananocrystalline Oxygen-Deficient TiOx Film. ACS Appl Mater Interfaces. 2017 Oct 25;9(42):36989-36996. PubMed PMID: 28975787.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film. AU - Srivastava,Saurabh, AU - Thomas,Joseph P, AU - Heinig,Nina F, AU - Leung,K T, Y1 - 2017/10/16/ PY - 2017/10/5/pubmed PY - 2017/10/5/medline PY - 2017/10/5/entrez KW - electroforming-free KW - interface-type switching KW - nonvolatile memories KW - oxygen-vacancy defect rich ultrananocrystallites KW - single-active-layer memristors SP - 36989 EP - 36996 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 9 IS - 42 N2 - The theoretical and practical realization of memristive devices has been hailed as the next step for nonvolatile memories, low-power remote sensing, and adaptive intelligent prototypes for neuromorphic and biological systems. However, the active materials of currently available memristors need to undergo an often destructive high-bias electroforming process in order to activate resistive switching. This limits their device performance in switching speed, endurance/retention, and power consumption upon high-density integration, due to excessive Joule heating. By employing a nanocrystalline oxygen-deficient TiOx switching matrix to localize the electric field at discrete locations, it is possible to resolve the Joule heating problem by reducing the need for electroforming at high bias. With a Pt/TiOx/Pt stacking architecture, our device follows an electric field driven, vacancy-modulated interface-type switching that is sensitive to the junction size. By scaling down the junction size, the SET voltage and output current can be reduced, and a SET voltage as low as +0.59 V can be obtained for a 5 × 5 μm2 junction size. Along with its potentially fast switching (over 105 cycles with a 100 μs voltage pulse) and high retention (over 105 s) performance, memristors based on these disordered oxygen-deficient TiOx films promise viable building blocks for next-generation nonvolatile memories and other logic circuit systems. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/28975787/High_Performance_Single_Active_Layer_Memristor_Based_on_an_Ultrananocrystalline_Oxygen_Deficient_TiOx_Film_ L2 - https://dx.doi.org/10.1021/acsami.7b07971 DB - PRIME DP - Unbound Medicine ER -
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