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Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.
Nat Mater 2018; 17(1):49-56NM

Abstract

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

Authors+Show Affiliations

State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.Department of Physics, University of Cambridge, Cambridge CB3 0HE, UK. Departments of Chemistry and Physics, St Andrews University, St Andrews KY16 9ST, UK.Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

29180776

Citation

Jiang, Jun, et al. "Temporary Formation of Highly Conducting Domain Walls for Non-destructive Read-out of Ferroelectric Domain-wall Resistance Switching Memories." Nature Materials, vol. 17, no. 1, 2018, pp. 49-56.
Jiang J, Bai ZL, Chen ZH, et al. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nat Mater. 2018;17(1):49-56.
Jiang, J., Bai, Z. L., Chen, Z. H., He, L., Zhang, D. W., Zhang, Q. H., ... Jiang, A. Q. (2018). Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nature Materials, 17(1), pp. 49-56. doi:10.1038/nmat5028.
Jiang J, et al. Temporary Formation of Highly Conducting Domain Walls for Non-destructive Read-out of Ferroelectric Domain-wall Resistance Switching Memories. Nat Mater. 2018;17(1):49-56. PubMed PMID: 29180776.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. AU - Jiang,Jun, AU - Bai,Zi Long, AU - Chen,Zhi Hui, AU - He,Long, AU - Zhang,David Wei, AU - Zhang,Qing Hua, AU - Shi,Jin An, AU - Park,Min Hyuk, AU - Scott,James F, AU - Hwang,Cheol Seong, AU - Jiang,An Quan, Y1 - 2017/11/20/ PY - 2017/05/19/received PY - 2017/10/10/accepted PY - 2017/11/29/pubmed PY - 2017/11/29/medline PY - 2017/11/29/entrez SP - 49 EP - 56 JF - Nature materials JO - Nat Mater VL - 17 IS - 1 N2 - Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm. SN - 1476-1122 UR - https://www.unboundmedicine.com/medline/citation/29180776/Temporary_formation_of_highly_conducting_domain_walls_for_non_destructive_read_out_of_ferroelectric_domain_wall_resistance_switching_memories_ L2 - http://dx.doi.org/10.1038/nmat5028 DB - PRIME DP - Unbound Medicine ER -