Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.
Materials (Basel). 2017 Dec 01; 10(12)M

Abstract

In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al₂O₃/Pt/ZnO/Al₂O₃ film electrode has great potential for application in high-temperature SAW devices.

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Authors+Show Affiliations

Liu X

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. tadyliu@outlook.com.

Peng B

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. bpeng@uestc.edu.cn.

Zhang W

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. wlzhang@uestc.edu.cn.

Zhu J

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. junzhu@uestc.edu.cn.

Liu X

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. xzliu@uestc.edu.cn.

Wei M

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China. wm2lzx1314@hotmail.com.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29194385

Citation

Liu, Xingpeng, et al. "Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices By Using Al₂O₃ Barrier Layer." Materials (Basel, Switzerland), vol. 10, no. 12, 2017.

Liu X, Peng B, Zhang W, et al. Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer. Materials (Basel). 2017;10(12).

Liu, X., Peng, B., Zhang, W., Zhu, J., Liu, X., & Wei, M. (2017). Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer. Materials (Basel, Switzerland), 10(12). https://doi.org/10.3390/ma10121377

Liu X, et al. Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices By Using Al₂O₃ Barrier Layer. Materials (Basel). 2017 Dec 1;10(12) PubMed PMID: 29194385.

* Article titles in AMA citation format should be in sentence-case

TY - JOUR T1 - Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer. AU - Liu,Xingpeng, AU - Peng,Bin, AU - Zhang,Wanli, AU - Zhu,Jun, AU - Liu,Xingzhao, AU - Wei,Meng, Y1 - 2017/12/01/ PY - 2017/11/08/received PY - 2017/11/24/revised PY - 2017/11/28/accepted PY - 2017/12/2/entrez PY - 2017/12/2/pubmed PY - 2017/12/2/medline KW - Al2O3 barrier layer KW - SAW sensor KW - electrical conductivity KW - high temperature electrode KW - langasite JF - Materials (Basel, Switzerland) JO - Materials (Basel) VL - 10 IS - 12 N2 - In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al₂O₃/Pt/ZnO/Al₂O₃ film electrode has great potential for application in high-temperature SAW devices. SN - 1996-1944 UR - https://www.unboundmedicine.com/medline/citation/29194385/Improvement_of_High_Temperature_Stability_of_Al₂O₃/Pt/ZnO/Al₂O₃_Film_Electrode_for_SAW_Devices_by_Using_Al₂O₃_Barrier_Layer_ DB - PRIME DP - Unbound Medicine ER -

Tags

Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.Materials (Basel). 2017 Dec 01; 10(12)M