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Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions.
ACS Appl Mater Interfaces 2018; 10(6):6024-6030AA

Abstract

Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO3/Nb:SrTiO3 interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO3/Nb:SrTiO3 CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture.

Authors+Show Affiliations

College of Physics and National Demonstration Center for Experimental Applied Physics Education, Qingdao University , Qingdao 266071, China.College of Physics and National Demonstration Center for Experimental Applied Physics Education, Qingdao University , Qingdao 266071, China.College of Physics and National Demonstration Center for Experimental Applied Physics Education, Qingdao University , Qingdao 266071, China.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29368502

Citation

Xi, Zhongnan, et al. "Nondestructive Readout Complementary Resistive Switches Based On Ferroelectric Tunnel Junctions." ACS Applied Materials & Interfaces, vol. 10, no. 6, 2018, pp. 6024-6030.
Xi Z, Zheng C, Wen Z. Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions. ACS Appl Mater Interfaces. 2018;10(6):6024-6030.
Xi, Z., Zheng, C., & Wen, Z. (2018). Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions. ACS Applied Materials & Interfaces, 10(6), pp. 6024-6030. doi:10.1021/acsami.7b18363.
Xi Z, Zheng C, Wen Z. Nondestructive Readout Complementary Resistive Switches Based On Ferroelectric Tunnel Junctions. ACS Appl Mater Interfaces. 2018 Feb 14;10(6):6024-6030. PubMed PMID: 29368502.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions. AU - Xi,Zhongnan, AU - Zheng,Chunyan, AU - Wen,Zheng, Y1 - 2018/02/05/ PY - 2018/1/26/pubmed PY - 2018/1/26/medline PY - 2018/1/26/entrez KW - Schottky barrier KW - complementary resistive switches KW - crossbar array KW - ferroelectric field effect KW - ferroelectric tunnel junction KW - resistive switching KW - sneak leakage SP - 6024 EP - 6030 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 10 IS - 6 N2 - Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO3/Nb:SrTiO3 interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO3/Nb:SrTiO3 CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/29368502/Nondestructive_Readout_Complementary_Resistive_Switches_Based_on_Ferroelectric_Tunnel_Junctions_ L2 - https://dx.doi.org/10.1021/acsami.7b18363 DB - PRIME DP - Unbound Medicine ER -