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Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions.
Nanoscale Res Lett 2018; 13(1):102NR

Abstract

Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

Authors+Show Affiliations

Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. chjia@henu.edu.cn.Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. wfzhang@henu.edu.cn.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29654517

Citation

Jia, Caihong, et al. "Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions." Nanoscale Research Letters, vol. 13, no. 1, 2018, p. 102.
Jia C, Li J, Yang G, et al. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. Nanoscale Res Lett. 2018;13(1):102.
Jia, C., Li, J., Yang, G., Chen, Y., & Zhang, W. (2018). Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. Nanoscale Research Letters, 13(1), p. 102. doi:10.1186/s11671-018-2513-6.
Jia C, et al. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. Nanoscale Res Lett. 2018 Apr 13;13(1):102. PubMed PMID: 29654517.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. AU - Jia,Caihong, AU - Li,Jiachen, AU - Yang,Guang, AU - Chen,Yonghai, AU - Zhang,Weifeng, Y1 - 2018/04/13/ PY - 2018/01/24/received PY - 2018/04/05/accepted PY - 2018/4/15/entrez PY - 2018/4/15/pubmed PY - 2018/4/15/medline KW - Asymmetric resistive switching KW - Ferroelectric KW - Ferroelectric/semiconductor heterojunctions SP - 102 EP - 102 JF - Nanoscale research letters JO - Nanoscale Res Lett VL - 13 IS - 1 N2 - Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions. SN - 1931-7573 UR - https://www.unboundmedicine.com/medline/citation/29654517/Ferroelectric_Field_Effect_Induced_Asymmetric_Resistive_Switching_Effect_in_BaTiO3/Nb:SrTiO3_Epitaxial_Heterojunctions_ L2 - https://dx.doi.org/10.1186/s11671-018-2513-6 DB - PRIME DP - Unbound Medicine ER -