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Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy.
Nanoscale 2018; 10(18):8397-8403N

Abstract

An effectively large bandgap and a high carrier mobility of two dimensional (2D) crystals are crucial in emerging materials for nanoelectronics. A previously unexplored two-dimensional material, monolayer TeO2, is proposed to have high stability, a wide direct gap and high carrier mobility, based on first-principles calculations. Our results show that 2D TeO2 is both thermally and dynamically stable. In addition, it is easily exfoliated from its bulk counterpart, a natural layered mineral tellurite. Importantly, 2D TeO2 always exhibits a direct bandgap when thinning from bulk (3.32 eV) to monolayer (3.70 eV), an energy range not covered by previously reported 2D materials. Furthermore, monolayer TeO2 is exceptional in high transport anisotropy, possessing not only high electron mobility (of the order of 1000 cm2 V-1 s-1) but also exceptionally high hole mobility (up to 9100 cm2 V-1 s-1). All these findings make 2D TeO2 a promising candidate for both power electronics and short-wavelength optoelectronic applications.

Authors+Show Affiliations

Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China. zhangslvip@njust.edu.cn zeng.haibo@njust.edu.cn.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29708258

Citation

Guo, Shiying, et al. "Ultrathin Tellurium Dioxide: Emerging Direct Bandgap Semiconductor With High-mobility Transport Anisotropy." Nanoscale, vol. 10, no. 18, 2018, pp. 8397-8403.
Guo S, Zhu Z, Hu X, et al. Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy. Nanoscale. 2018;10(18):8397-8403.
Guo, S., Zhu, Z., Hu, X., Zhou, W., Song, X., Zhang, S., ... Zeng, H. (2018). Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy. Nanoscale, 10(18), pp. 8397-8403. doi:10.1039/c8nr01028e.
Guo S, et al. Ultrathin Tellurium Dioxide: Emerging Direct Bandgap Semiconductor With High-mobility Transport Anisotropy. Nanoscale. 2018 May 10;10(18):8397-8403. PubMed PMID: 29708258.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy. AU - Guo,Shiying, AU - Zhu,Zhen, AU - Hu,Xuemin, AU - Zhou,Wenhan, AU - Song,Xiufeng, AU - Zhang,Shengli, AU - Zhang,Kan, AU - Zeng,Haibo, PY - 2018/5/1/pubmed PY - 2018/5/1/medline PY - 2018/5/1/entrez SP - 8397 EP - 8403 JF - Nanoscale JO - Nanoscale VL - 10 IS - 18 N2 - An effectively large bandgap and a high carrier mobility of two dimensional (2D) crystals are crucial in emerging materials for nanoelectronics. A previously unexplored two-dimensional material, monolayer TeO2, is proposed to have high stability, a wide direct gap and high carrier mobility, based on first-principles calculations. Our results show that 2D TeO2 is both thermally and dynamically stable. In addition, it is easily exfoliated from its bulk counterpart, a natural layered mineral tellurite. Importantly, 2D TeO2 always exhibits a direct bandgap when thinning from bulk (3.32 eV) to monolayer (3.70 eV), an energy range not covered by previously reported 2D materials. Furthermore, monolayer TeO2 is exceptional in high transport anisotropy, possessing not only high electron mobility (of the order of 1000 cm2 V-1 s-1) but also exceptionally high hole mobility (up to 9100 cm2 V-1 s-1). All these findings make 2D TeO2 a promising candidate for both power electronics and short-wavelength optoelectronic applications. SN - 2040-3372 UR - https://www.unboundmedicine.com/medline/citation/29708258/Ultrathin_tellurium_dioxide:_emerging_direct_bandgap_semiconductor_with_high_mobility_transport_anisotropy_ L2 - https://doi.org/10.1039/c8nr01028e DB - PRIME DP - Unbound Medicine ER -