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Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing.
Nanotechnology. 2018 Sep 21; 29(38):385203.N

Abstract

Owing to the capability of integrating the information storage and computing in the same physical location, in-memory computing with memristors has become a research hotspot as a promising route for non von Neumann architecture. However, it is still a challenge to develop high performance devices as well as optimized logic methodologies to realize energy-efficient computing. Herein, filamentary Cu/GeTe/TiN memristor is reported to show satisfactory properties with nanosecond switching speed (<60 ns), low voltage operation (<2 V), high endurance (>104 cycles) and good retention (>104 s @85 °C). It is revealed that the charge carrier conduction mechanisms in high resistance and low resistance states are Schottky emission and hopping transport between the adjacent Cu clusters, respectively, based on the analysis of current-voltage behaviors and resistance-temperature characteristics. An intuitive picture is given to describe the dynamic processes of resistive switching. Moreover, based on the basic material implication (IMP) logic circuit, we proposed a reconfigurable logic method and experimentally implemented IMP, NOT, OR, and COPY logic functions. Design of a one-bit full adder with reduction in computational sequences and its validation in simulation further demonstrate the potential practical application. The results provide important progress towards understanding of resistive switching mechanism and realization of energy-efficient in-memory computing architecture.

Authors+Show Affiliations

Wuhan National Research Center for Optoelectronics & School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29949523

Citation

Jin, Miao-Miao, et al. "Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-efficient In-memory Computing." Nanotechnology, vol. 29, no. 38, 2018, p. 385203.
Jin MM, Cheng L, Li Y, et al. Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing. Nanotechnology. 2018;29(38):385203.
Jin, M. M., Cheng, L., Li, Y., Hu, S. Y., Lu, K., Chen, J., Duan, N., Wang, Z. R., Zhou, Y. X., Chang, T. C., & Miao, X. S. (2018). Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing. Nanotechnology, 29(38), 385203. https://doi.org/10.1088/1361-6528/aacf84
Jin MM, et al. Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-efficient In-memory Computing. Nanotechnology. 2018 Sep 21;29(38):385203. PubMed PMID: 29949523.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing. AU - Jin,Miao-Miao, AU - Cheng,Long, AU - Li,Yi, AU - Hu,Si-Yu, AU - Lu,Ke, AU - Chen,Jia, AU - Duan,Nian, AU - Wang,Zhuo-Rui, AU - Zhou,Ya-Xiong, AU - Chang,Ting-Chang, AU - Miao,Xiang-Shui, Y1 - 2018/06/27/ PY - 2018/6/28/pubmed PY - 2018/6/28/medline PY - 2018/6/28/entrez SP - 385203 EP - 385203 JF - Nanotechnology JO - Nanotechnology VL - 29 IS - 38 N2 - Owing to the capability of integrating the information storage and computing in the same physical location, in-memory computing with memristors has become a research hotspot as a promising route for non von Neumann architecture. However, it is still a challenge to develop high performance devices as well as optimized logic methodologies to realize energy-efficient computing. Herein, filamentary Cu/GeTe/TiN memristor is reported to show satisfactory properties with nanosecond switching speed (<60 ns), low voltage operation (<2 V), high endurance (>104 cycles) and good retention (>104 s @85 °C). It is revealed that the charge carrier conduction mechanisms in high resistance and low resistance states are Schottky emission and hopping transport between the adjacent Cu clusters, respectively, based on the analysis of current-voltage behaviors and resistance-temperature characteristics. An intuitive picture is given to describe the dynamic processes of resistive switching. Moreover, based on the basic material implication (IMP) logic circuit, we proposed a reconfigurable logic method and experimentally implemented IMP, NOT, OR, and COPY logic functions. Design of a one-bit full adder with reduction in computational sequences and its validation in simulation further demonstrate the potential practical application. The results provide important progress towards understanding of resistive switching mechanism and realization of energy-efficient in-memory computing architecture. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/29949523/Reconfigurable_logic_in_nanosecond_Cu/GeTe/TiN_filamentary_memristors_for_energy_efficient_in_memory_computing_ L2 - https://doi.org/10.1088/1361-6528/aacf84 DB - PRIME DP - Unbound Medicine ER -
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