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Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor.
ACS Appl Mater Interfaces 2018; 10(29):24598-24606AA

Abstract

In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and "learning-experience" behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors.

Authors+Show Affiliations

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.Department of Electronic Communication and Technology , Shenzhen Institute of Information Technology , Shenzhen , Guangdong 518172 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China. Foshan Research Institute of Sun Yat-Sen University , Foshan , Guangdong 528222 , China.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China. Department of Electronic Communication and Technology , Shenzhen Institute of Information Technology , Shenzhen , Guangdong 518172 , China.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

29995376

Citation

Li, Ya, et al. "Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor." ACS Applied Materials & Interfaces, vol. 10, no. 29, 2018, pp. 24598-24606.
Li Y, Chu J, Duan W, et al. Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor. ACS Appl Mater Interfaces. 2018;10(29):24598-24606.
Li, Y., Chu, J., Duan, W., Cai, G., Fan, X., Wang, X., ... Pei, Y. (2018). Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor. ACS Applied Materials & Interfaces, 10(29), pp. 24598-24606. doi:10.1021/acsami.8b05749.
Li Y, et al. Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor. ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24598-24606. PubMed PMID: 29995376.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor. AU - Li,Ya, AU - Chu,Jinxing, AU - Duan,Weijie, AU - Cai,Guangshuo, AU - Fan,Xihua, AU - Wang,Xinzhong, AU - Wang,Gang, AU - Pei,Yanli, Y1 - 2018/07/11/ PY - 2018/7/12/pubmed PY - 2018/7/12/medline PY - 2018/7/12/entrez KW - NiO memristor KW - analog and digital resistive switching KW - solution combustion process KW - synaptic plasticity SP - 24598 EP - 24606 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 10 IS - 29 N2 - In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and "learning-experience" behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/29995376/Analog_and_Digital_Bipolar_Resistive_Switching_in_Solution_Combustion_Processed_NiO_Memristor_ L2 - https://dx.doi.org/10.1021/acsami.8b05749 DB - PRIME DP - Unbound Medicine ER -