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Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls.
Nat Nanotechnol 2018; 13(10):947-952NN

Abstract

Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices. Here, we explore and reversibly switch the polarization of square BiFeO3 nanoislands in a self-assembled array. Each island confines cross-shaped, charged domain walls in a centre-type domain. Electrostatic and geometric boundary conditions induce two stable domain configurations: centre-convergent and centre-divergent. We switch the polarization deterministically back and forth between these two states, which alters the domain wall conductance by three orders of magnitude, while the position of the domain wall remains static because of its confinement within the BiFeO3 islands.

Authors+Show Affiliations

State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China. Department of Physics, Beijing Normal University, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.Department of Materials Science and Engineering, Penn State University, University Park, PA, USA.International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, China.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China. Department of Materials Science and Engineering, Penn State University, University Park, PA, USA.State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.Department of Physics, Beijing Normal University, Beijing, China. jxzhang@bnu.edu.cn.State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China. cwnan@tsinghua.edu.cn.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

30038370

Citation

Ma, Ji, et al. "Controllable Conductive Readout in Self-assembled, Topologically Confined Ferroelectric Domain Walls." Nature Nanotechnology, vol. 13, no. 10, 2018, pp. 947-952.
Ma J, Ma J, Zhang Q, et al. Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls. Nat Nanotechnol. 2018;13(10):947-952.
Ma, J., Ma, J., Zhang, Q., Peng, R., Wang, J., Liu, C., ... Nan, C. W. (2018). Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls. Nature Nanotechnology, 13(10), pp. 947-952. doi:10.1038/s41565-018-0204-1.
Ma J, et al. Controllable Conductive Readout in Self-assembled, Topologically Confined Ferroelectric Domain Walls. Nat Nanotechnol. 2018;13(10):947-952. PubMed PMID: 30038370.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls. AU - Ma,Ji, AU - Ma,Jing, AU - Zhang,Qinghua, AU - Peng,Renci, AU - Wang,Jing, AU - Liu,Chen, AU - Wang,Meng, AU - Li,Ning, AU - Chen,Mingfeng, AU - Cheng,Xiaoxing, AU - Gao,Peng, AU - Gu,Lin, AU - Chen,Long-Qing, AU - Yu,Pu, AU - Zhang,Jinxing, AU - Nan,Ce-Wen, Y1 - 2018/07/23/ PY - 2018/02/13/received PY - 2018/06/18/accepted PY - 2018/7/25/pubmed PY - 2018/7/25/medline PY - 2018/7/25/entrez SP - 947 EP - 952 JF - Nature nanotechnology JO - Nat Nanotechnol VL - 13 IS - 10 N2 - Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices. Here, we explore and reversibly switch the polarization of square BiFeO3 nanoislands in a self-assembled array. Each island confines cross-shaped, charged domain walls in a centre-type domain. Electrostatic and geometric boundary conditions induce two stable domain configurations: centre-convergent and centre-divergent. We switch the polarization deterministically back and forth between these two states, which alters the domain wall conductance by three orders of magnitude, while the position of the domain wall remains static because of its confinement within the BiFeO3 islands. SN - 1748-3395 UR - https://www.unboundmedicine.com/medline/citation/30038370/Controllable_conductive_readout_in_self_assembled_topologically_confined_ferroelectric_domain_walls_ DB - PRIME DP - Unbound Medicine ER -