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Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor.
. 2019 Jan; 31(3):e1805769.

Abstract

Concomitance of diverse synaptic plasticity across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable of emulating short-term (STP) and long-term plasticity (LTP) concomitantly are essential. In existing memristors, however, STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, the first demonstration of truly concomitant STP and LTP is reported in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2 O2 Se is used for memristors for the first time, opening up the prospects for ultrathin, high-speed, and low-power neuromorphic devices. The concerted action of STP and LTP allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A heuristic recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the development of generic memristor platforms for highly dynamic neuromorphic computing.

Authors+Show Affiliations

Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.School of Life Sciences, Tsinghua-Peking Joint Center for Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, China.Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.School of Aerospace Engineering, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.School of Life Sciences, Tsinghua-Peking Joint Center for Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, China.Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

30461090

Citation

Zhang, Ziyang, et al. "Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor." Advanced Materials (Deerfield Beach, Fla.), vol. 31, no. 3, 2019, pp. e1805769.
Zhang Z, Li T, Wu Y, et al. Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor. Adv Mater Weinheim. 2019;31(3):e1805769.
Zhang, Z., Li, T., Wu, Y., Jia, Y., Tan, C., Xu, X., Wang, G., Lv, J., Zhang, W., He, Y., Pei, J., Ma, C., Li, G., Xu, H., Shi, L., Peng, H., & Li, H. (2019). Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor. Advanced Materials (Deerfield Beach, Fla.), 31(3), e1805769. https://doi.org/10.1002/adma.201805769
Zhang Z, et al. Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor. Adv Mater Weinheim. 2019;31(3):e1805769. PubMed PMID: 30461090.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi2 O2 Se-Based Three-Terminal Memristor. AU - Zhang,Ziyang, AU - Li,Tianran, AU - Wu,Yujie, AU - Jia,Yinjun, AU - Tan,Congwei, AU - Xu,Xintong, AU - Wang,Guanrui, AU - Lv,Juan, AU - Zhang,Wei, AU - He,Yuhan, AU - Pei,Jing, AU - Ma,Cheng, AU - Li,Guoqi, AU - Xu,Haizheng, AU - Shi,Luping, AU - Peng,Hailin, AU - Li,Huanglong, Y1 - 2018/11/20/ PY - 2018/09/05/received PY - 2018/10/29/revised PY - 2018/11/22/pubmed PY - 2019/6/14/medline PY - 2018/11/22/entrez KW - Bi2O2Se KW - hybrid density functional calculations KW - long-term plasticity KW - short-term plasticity KW - three-terminal memristors SP - e1805769 EP - e1805769 JF - Advanced materials (Deerfield Beach, Fla.) JO - Adv. Mater. Weinheim VL - 31 IS - 3 N2 - Concomitance of diverse synaptic plasticity across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable of emulating short-term (STP) and long-term plasticity (LTP) concomitantly are essential. In existing memristors, however, STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, the first demonstration of truly concomitant STP and LTP is reported in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2 O2 Se is used for memristors for the first time, opening up the prospects for ultrathin, high-speed, and low-power neuromorphic devices. The concerted action of STP and LTP allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A heuristic recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the development of generic memristor platforms for highly dynamic neuromorphic computing. SN - 1521-4095 UR - https://www.unboundmedicine.com/medline/citation/30461090/Truly_Concomitant_and_Independently_Expressed_Short__and_Long_Term_Plasticity_in_a_Bi2_O2_Se_Based_Three_Terminal_Memristor_ DB - PRIME DP - Unbound Medicine ER -