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Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions.
Small 2019; 15(11):e1805042S

Abstract

Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO3 , with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states ("1" = "HRS+LRS" and "0" = "LRS+HRS"), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non-destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual-tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.

Authors+Show Affiliations

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Catalonia, Spain.Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Catalonia, Spain.Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Catalonia, Spain.Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Catalonia, Spain.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

30740894

Citation

Qian, Mengdi, et al. "Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions." Small (Weinheim an Der Bergstrasse, Germany), vol. 15, no. 11, 2019, pp. e1805042.
Qian M, Fina I, Sánchez F, et al. Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions. Small. 2019;15(11):e1805042.
Qian, M., Fina, I., Sánchez, F., & Fontcuberta, J. (2019). Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions. Small (Weinheim an Der Bergstrasse, Germany), 15(11), pp. e1805042. doi:10.1002/smll.201805042.
Qian M, et al. Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions. Small. 2019;15(11):e1805042. PubMed PMID: 30740894.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions. AU - Qian,Mengdi, AU - Fina,Ignasi, AU - Sánchez,Florencio, AU - Fontcuberta,Josep, Y1 - 2019/02/10/ PY - 2018/11/28/received PY - 2019/01/17/revised PY - 2019/2/12/pubmed PY - 2019/2/12/medline PY - 2019/2/12/entrez KW - BaTiO3 KW - complementary resistive switching KW - ferroelectric KW - ferroelectric tunnel junctions SP - e1805042 EP - e1805042 JF - Small (Weinheim an der Bergstrasse, Germany) JO - Small VL - 15 IS - 11 N2 - Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO3 , with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states ("1" = "HRS+LRS" and "0" = "LRS+HRS"), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non-destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual-tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements. SN - 1613-6829 UR - https://www.unboundmedicine.com/medline/citation/30740894/Complementary_Resistive_Switching_Using_Metal_Ferroelectric_Metal_Tunnel_Junctions_ L2 - https://doi.org/10.1002/smll.201805042 DB - PRIME DP - Unbound Medicine ER -