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ZnO/Si nanowires heterojunction array-based nitric oxide (NO) gas sensor with noise-limited detectivity approaching 10 ppb.
Nanotechnology 2019; 30(30):305501N

Abstract

We report a ZnO/Silicon nanowire (ZnO/Si NWs) heterojunction array-based NO gas sensor operating at room temperature with an extremely high response (noise limited response ∼10 ppb). The sensor shows very high selectivity towards NO gas sensing and limited perturbation in response due to the presence of moisture. The sensor has been fabricated by using cost-effective chemical processing that is compatible with wafer-level processing. The vertically aligned Si NWs array has been made by an electroless etching method and the ZnO nanostructure was made by chemical solution deposition and spin-coating. Extensive cross-sectional electron microscopy and composition analysis by line EDS allowed us to make a physical model. The electrical characteristic of the model was to fit the I-V data before and after exposure to gas and essential changes in electrical parameters were obtained. This was then explained based on a proposal for the mechanism of gas sensing. We observe that the heterostructure leads to a synergetic effect where the sensing response is more than the sum total of the individual components, namely the ZnO and the Si NWs. The response is much enhanced in the p-n junction when the n-ZnO nanostructure interfaces with p-Si NW compared to that in the n-n junction formed by ZnO on n-Si NW.

Authors+Show Affiliations

Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Salt Lake, Block-JD, Sector-III, Kolkata 700106, India.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

30889562

Citation

Samanta, Chandan, et al. "ZnO/Si Nanowires Heterojunction Array-based Nitric Oxide (NO) Gas Sensor With Noise-limited Detectivity Approaching 10 Ppb." Nanotechnology, vol. 30, no. 30, 2019, p. 305501.
Samanta C, Ghatak A, Raychaudhuri AK, et al. ZnO/Si nanowires heterojunction array-based nitric oxide (NO) gas sensor with noise-limited detectivity approaching 10 ppb. Nanotechnology. 2019;30(30):305501.
Samanta, C., Ghatak, A., Raychaudhuri, A. K., & Ghosh, B. (2019). ZnO/Si nanowires heterojunction array-based nitric oxide (NO) gas sensor with noise-limited detectivity approaching 10 ppb. Nanotechnology, 30(30), p. 305501. doi:10.1088/1361-6528/ab10f8.
Samanta C, et al. ZnO/Si Nanowires Heterojunction Array-based Nitric Oxide (NO) Gas Sensor With Noise-limited Detectivity Approaching 10 Ppb. Nanotechnology. 2019 Mar 19;30(30):305501. PubMed PMID: 30889562.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - ZnO/Si nanowires heterojunction array-based nitric oxide (NO) gas sensor with noise-limited detectivity approaching 10 ppb. AU - Samanta,Chandan, AU - Ghatak,Ankita, AU - Raychaudhuri,A K, AU - Ghosh,Barnali, Y1 - 2019/03/19/ PY - 2019/3/20/pubmed PY - 2019/3/20/medline PY - 2019/3/20/entrez SP - 305501 EP - 305501 JF - Nanotechnology JO - Nanotechnology VL - 30 IS - 30 N2 - We report a ZnO/Silicon nanowire (ZnO/Si NWs) heterojunction array-based NO gas sensor operating at room temperature with an extremely high response (noise limited response ∼10 ppb). The sensor shows very high selectivity towards NO gas sensing and limited perturbation in response due to the presence of moisture. The sensor has been fabricated by using cost-effective chemical processing that is compatible with wafer-level processing. The vertically aligned Si NWs array has been made by an electroless etching method and the ZnO nanostructure was made by chemical solution deposition and spin-coating. Extensive cross-sectional electron microscopy and composition analysis by line EDS allowed us to make a physical model. The electrical characteristic of the model was to fit the I-V data before and after exposure to gas and essential changes in electrical parameters were obtained. This was then explained based on a proposal for the mechanism of gas sensing. We observe that the heterostructure leads to a synergetic effect where the sensing response is more than the sum total of the individual components, namely the ZnO and the Si NWs. The response is much enhanced in the p-n junction when the n-ZnO nanostructure interfaces with p-Si NW compared to that in the n-n junction formed by ZnO on n-Si NW. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/30889562/ZnO/Si_nanowires_heterojunction_array_based_nitric_oxide__NO__gas_sensor_with_noise_limited_detectivity_approaching_10_ppb_ L2 - https://doi.org/10.1088/1361-6528/ab10f8 DB - PRIME DP - Unbound Medicine ER -