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Synaptic memory devices from CoO/Nb:SrTiO3 junction.
R Soc Open Sci 2019; 6(4):181098RS

Abstract

Non-volatile memristors are promising for future hardware-based neurocomputation application because they are capable of emulating biological synaptic functions. Various material strategies have been studied to pursue better device performance, such as lower energy cost, better biological plausibility, etc. In this work, we show a novel design for non-volatile memristor based on CoO/Nb:SrTiO3 heterojunction. We found the memristor intrinsically exhibited resistivity switching behaviours, which can be ascribed to the migration of oxygen vacancies and charge trapping and detrapping at the heterojunction interface. The carrier trapping/detrapping level can be finely adjusted by regulating voltage amplitudes. Gradual conductance modulation can therefore be realized by using proper voltage pulse stimulations. And the spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in the device. Our results indicate the possibility of achieving artificial synapses with CoO/Nb:SrTiO3 heterojunction. Compared with filamentary type of the synaptic device, our device has the potential to reduce energy consumption, realize large-scale neuromorphic system and work more reliably, since no structural distortion occurs.

Authors+Show Affiliations

School of Control Science and Engineering, Institute of Biomedical Engineering, Shandong University, Jinan, Shandong 250061, People's Republic of China. Department of Human Microbiome, School of Stomatology, Shandong University, Jinan, Shandong 250012, People's Republic of China.College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

31183114

Citation

Zhao, Le, et al. "Synaptic Memory Devices From CoO/Nb:SrTiO3 Junction." Royal Society Open Science, vol. 6, no. 4, 2019, p. 181098.
Zhao L, Xu J, Shang X, et al. Synaptic memory devices from CoO/Nb:SrTiO3 junction. R Soc Open Sci. 2019;6(4):181098.
Zhao, L., Xu, J., Shang, X., Li, X., Li, Q., & Li, S. (2019). Synaptic memory devices from CoO/Nb:SrTiO3 junction. Royal Society Open Science, 6(4), p. 181098. doi:10.1098/rsos.181098.
Zhao L, et al. Synaptic Memory Devices From CoO/Nb:SrTiO3 Junction. R Soc Open Sci. 2019;6(4):181098. PubMed PMID: 31183114.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Synaptic memory devices from CoO/Nb:SrTiO3 junction. AU - Zhao,Le, AU - Xu,Jie, AU - Shang,Xiantao, AU - Li,Xue, AU - Li,Qiang, AU - Li,Shandong, Y1 - 2019/04/17/ PY - 2018/07/17/received PY - 2019/03/21/accepted PY - 2019/6/12/entrez PY - 2019/6/12/pubmed PY - 2019/6/12/medline KW - conductance modulation KW - non-volatile memristor KW - spike-timing-dependent plasticity KW - synaptic device SP - 181098 EP - 181098 JF - Royal Society open science JO - R Soc Open Sci VL - 6 IS - 4 N2 - Non-volatile memristors are promising for future hardware-based neurocomputation application because they are capable of emulating biological synaptic functions. Various material strategies have been studied to pursue better device performance, such as lower energy cost, better biological plausibility, etc. In this work, we show a novel design for non-volatile memristor based on CoO/Nb:SrTiO3 heterojunction. We found the memristor intrinsically exhibited resistivity switching behaviours, which can be ascribed to the migration of oxygen vacancies and charge trapping and detrapping at the heterojunction interface. The carrier trapping/detrapping level can be finely adjusted by regulating voltage amplitudes. Gradual conductance modulation can therefore be realized by using proper voltage pulse stimulations. And the spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in the device. Our results indicate the possibility of achieving artificial synapses with CoO/Nb:SrTiO3 heterojunction. Compared with filamentary type of the synaptic device, our device has the potential to reduce energy consumption, realize large-scale neuromorphic system and work more reliably, since no structural distortion occurs. SN - 2054-5703 UR - https://www.unboundmedicine.com/medline/citation/31183114/Synaptic_memory_devices_from_CoO/Nb:SrTiO3_junction_ L2 - https://royalsocietypublishing.org/doi/full/10.1098/rsos.181098?url_ver=Z39.88-2003&rfr_id=ori:rid:crossref.org&rfr_dat=cr_pub=pubmed DB - PRIME DP - Unbound Medicine ER -