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Dynamic modulation of the Fermi energy in suspended graphene backgated devices.

Abstract

Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm2V-1s-1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far, attempts at reliably fabricating suspended graphene devices comprising metal contacts, have often been hampered by difficulties in exceeding sizes of 1 µm in diameter, if using UV lithography. In this work, area of suspended graphene large enough to be utilized in microelectronic devices, have been obtained by suspending a CVD graphene film over cavities, with top contacts defined through UV lithography with both wet and dry etching. An area of up to 160 µm2 can be fabricated as backgated devices. The suspended areas exhibit rippling of the surfaces which simultaneously introduces both tensile and compressive strain on the graphene film. Finally, the variations of the Fermi level in the suspended graphene areas can be modulated by applying a potential difference between the top contacts and the backgate. Having achieved large area suspended graphene, in a manner compatible with CMOS fabrication processes, together with enabling the modulation of the Fermi level, are substantial steps forward in demonstrating the potential of suspended graphene-based electronic devices and sensors.

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  • Authors+Show Affiliations

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. School of Materials, University of Manchester, Manchester, UK. Department of Physics, College of Education for Pure Science, University of Anbar, Anbar, Iraq.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. Manchester Institute of Biotechnology, University of Manchester, Manchester, UK.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. Physics Department, Faculty of Science, King Khalid University, Abha, Saudi Arabia.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.

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    School of Materials, University of Manchester, Manchester, UK. National Graphene Institute, University of Manchester, Manchester, UK.

    ,

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.

    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.

    Source

    Pub Type(s)

    Journal Article

    Language

    eng

    PubMed ID

    31231447

    Citation

    Dawood, Omar M., et al. "Dynamic Modulation of the Fermi Energy in Suspended Graphene Backgated Devices." Science and Technology of Advanced Materials, vol. 20, no. 1, 2019, pp. 568-579.
    Dawood OM, Gupta RK, Monteverde U, et al. Dynamic modulation of the Fermi energy in suspended graphene backgated devices. Sci Technol Adv Mater. 2019;20(1):568-579.
    Dawood, O. M., Gupta, R. K., Monteverde, U., Alqahtani, F. H., Kim, H. Y., Sexton, J., ... Migliorato, M. A. (2019). Dynamic modulation of the Fermi energy in suspended graphene backgated devices. Science and Technology of Advanced Materials, 20(1), pp. 568-579. doi:10.1080/14686996.2019.1612710.
    Dawood OM, et al. Dynamic Modulation of the Fermi Energy in Suspended Graphene Backgated Devices. Sci Technol Adv Mater. 2019;20(1):568-579. PubMed PMID: 31231447.
    * Article titles in AMA citation format should be in sentence-case
    TY - JOUR T1 - Dynamic modulation of the Fermi energy in suspended graphene backgated devices. AU - Dawood,Omar M, AU - Gupta,Rakesh Kumar, AU - Monteverde,Umberto, AU - Alqahtani,Faisal H, AU - Kim,Hong-Yeol, AU - Sexton,James, AU - Young,Robert J, AU - Missous,Mohamed, AU - Migliorato,Max A, Y1 - 2019/06/03/ PY - 2019/02/22/received PY - 2019/04/18/revised PY - 2019/04/25/accepted PY - 2019/6/25/entrez PY - 2019/6/25/pubmed PY - 2019/6/25/medline KW - 10 Engineering and Structural materials KW - 104 Carbon and related materials KW - 201 Electronics / Semiconductor / TCOs KW - 208 Sensors and actuators KW - 503 TEM, STEM, SEM KW - 505 Optical / Molecular spectroscopy KW - Raman spectroscopy KW - Suspended graphene KW - atomic force microscopy SP - 568 EP - 579 JF - Science and technology of advanced materials JO - Sci Technol Adv Mater VL - 20 IS - 1 N2 - Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm2V-1s-1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far, attempts at reliably fabricating suspended graphene devices comprising metal contacts, have often been hampered by difficulties in exceeding sizes of 1 µm in diameter, if using UV lithography. In this work, area of suspended graphene large enough to be utilized in microelectronic devices, have been obtained by suspending a CVD graphene film over cavities, with top contacts defined through UV lithography with both wet and dry etching. An area of up to 160 µm2 can be fabricated as backgated devices. The suspended areas exhibit rippling of the surfaces which simultaneously introduces both tensile and compressive strain on the graphene film. Finally, the variations of the Fermi level in the suspended graphene areas can be modulated by applying a potential difference between the top contacts and the backgate. Having achieved large area suspended graphene, in a manner compatible with CMOS fabrication processes, together with enabling the modulation of the Fermi level, are substantial steps forward in demonstrating the potential of suspended graphene-based electronic devices and sensors. SN - 1468-6996 UR - https://www.unboundmedicine.com/medline/citation/31231447/Dynamic_modulation_of_the_Fermi_energy_in_suspended_graphene_backgated_devices L2 - https://www.ncbi.nlm.nih.gov/pmc/articles/pmid/31231447/ DB - PRIME DP - Unbound Medicine ER -