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Synaptic learning behavior of a TiO2 nanowire memristor.
Nanotechnology 2019; 30(42):425202N

Abstract

TiO2 nanowire memristors were fabricated by dielectrophoresis. The responding current of the memristor continuously increases and decreases with the consecutive positive and negative sweep voltage, which is similar to the nonlinear transmission characteristics of biological synapses. Spike-rate-dependent plasticity and learning behaviors of TiO2 memristor were studied by applying programmed pulses. The pulses with higher amplitude, bigger width and smaller interval cause a larger excitatory postsynaptic current. The number of relearning pulses is decreased with the learning experience, and a deepening memory will be consolidated by the repeated learning process. A mechanism based on the oxygen vacancy migration is proposed for the learning behavior. Excess oxygen vacancies are generated during the learning process and the conducting pathways are formed by the vacancy drift under the applied voltage. After removing the voltage at the forgetting process, back diffusion and electron trapping of the oxygen vacancies dominate the relaxation time, and the metastable atoms are formed with the involvement of the oxygen atoms. However, weak chemical bonding among the metastable atoms leads to the migration of the regenerated oxygen vacancies again, contributing to the enhanced current in the relearning process.

Authors+Show Affiliations

Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, People's Republic of China. Centre for Advanced Materials Joining, Department of Mechanics and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Pub Type(s)

Journal Article

Language

eng

PubMed ID

31307022

Citation

Zhao, Bo, et al. "Synaptic Learning Behavior of a TiO2 Nanowire Memristor." Nanotechnology, vol. 30, no. 42, 2019, p. 425202.
Zhao B, Xiao M, Zhou YN. Synaptic learning behavior of a TiO2 nanowire memristor. Nanotechnology. 2019;30(42):425202.
Zhao, B., Xiao, M., & Zhou, Y. N. (2019). Synaptic learning behavior of a TiO2 nanowire memristor. Nanotechnology, 30(42), p. 425202. doi:10.1088/1361-6528/ab3260.
Zhao B, Xiao M, Zhou YN. Synaptic Learning Behavior of a TiO2 Nanowire Memristor. Nanotechnology. 2019 Oct 18;30(42):425202. PubMed PMID: 31307022.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Synaptic learning behavior of a TiO2 nanowire memristor. AU - Zhao,Bo, AU - Xiao,Ming, AU - Zhou,Y Norman, Y1 - 2019/07/15/ PY - 2019/7/16/pubmed PY - 2019/7/16/medline PY - 2019/7/16/entrez SP - 425202 EP - 425202 JF - Nanotechnology JO - Nanotechnology VL - 30 IS - 42 N2 - TiO2 nanowire memristors were fabricated by dielectrophoresis. The responding current of the memristor continuously increases and decreases with the consecutive positive and negative sweep voltage, which is similar to the nonlinear transmission characteristics of biological synapses. Spike-rate-dependent plasticity and learning behaviors of TiO2 memristor were studied by applying programmed pulses. The pulses with higher amplitude, bigger width and smaller interval cause a larger excitatory postsynaptic current. The number of relearning pulses is decreased with the learning experience, and a deepening memory will be consolidated by the repeated learning process. A mechanism based on the oxygen vacancy migration is proposed for the learning behavior. Excess oxygen vacancies are generated during the learning process and the conducting pathways are formed by the vacancy drift under the applied voltage. After removing the voltage at the forgetting process, back diffusion and electron trapping of the oxygen vacancies dominate the relaxation time, and the metastable atoms are formed with the involvement of the oxygen atoms. However, weak chemical bonding among the metastable atoms leads to the migration of the regenerated oxygen vacancies again, contributing to the enhanced current in the relearning process. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/31307022/Synaptic_learning_behavior_of_TiO<sub>2</sub>_nanowire_memristor L2 - https://doi.org/10.1088/1361-6528/ab3260 DB - PRIME DP - Unbound Medicine ER -