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Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier.
Adv Mater 2019; :e1904123AM

Abstract

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.

Authors+Show Affiliations

College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, China. Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China.National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China.

Pub Type(s)

Journal Article
Review

Language

eng

PubMed ID

31583775

Citation

Wen, Zheng, and Di Wu. "Ferroelectric Tunnel Junctions: Modulations On the Potential Barrier." Advanced Materials (Deerfield Beach, Fla.), 2019, pp. e1904123.
Wen Z, Wu D. Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier. Adv Mater Weinheim. 2019.
Wen, Z., & Wu, D. (2019). Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier. Advanced Materials (Deerfield Beach, Fla.), pp. e1904123. doi:10.1002/adma.201904123.
Wen Z, Wu D. Ferroelectric Tunnel Junctions: Modulations On the Potential Barrier. Adv Mater Weinheim. 2019 Oct 3;e1904123. PubMed PMID: 31583775.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier. AU - Wen,Zheng, AU - Wu,Di, Y1 - 2019/10/03/ PY - 2019/06/29/received PY - 2019/08/16/revised PY - 2019/10/5/entrez KW - ferroelectric tunnel junctions KW - ferroelectricity KW - nonvolatile memory KW - resistance switching KW - tunneling electroresistance SP - e1904123 EP - e1904123 JF - Advanced materials (Deerfield Beach, Fla.) JO - Adv. Mater. Weinheim N2 - Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined. SN - 1521-4095 UR - https://www.unboundmedicine.com/medline/citation/31583775/Ferroelectric_Tunnel_Junctions:_Modulations_on_the_Potential_Barrier_ L2 - https://doi.org/10.1002/adma.201904123 DB - PRIME DP - Unbound Medicine ER -
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