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Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies.
ACS Appl Mater Interfaces. 2020 Jan 08; 12(1):1069-1077.AA

Abstract

The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.

Authors

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Pub Type(s)

Journal Article

Language

eng

PubMed ID

31820625

Citation

Park, Sung-Mean, et al. "Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor Through the Increase of the Number of Oxygen Vacancies." ACS Applied Materials & Interfaces, vol. 12, no. 1, 2020, pp. 1069-1077.
Park SM, Hwang HG, Woo JU, et al. Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies. ACS Appl Mater Interfaces. 2020;12(1):1069-1077.
Park, S. M., Hwang, H. G., Woo, J. U., Lee, W. H., Chae, S. J., & Nahm, S. (2020). Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies. ACS Applied Materials & Interfaces, 12(1), 1069-1077. https://doi.org/10.1021/acsami.9b18794
Park SM, et al. Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor Through the Increase of the Number of Oxygen Vacancies. ACS Appl Mater Interfaces. 2020 Jan 8;12(1):1069-1077. PubMed PMID: 31820625.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies. AU - Park,Sung-Mean, AU - Hwang,Hyun-Gyu, AU - Woo,Jong-Un, AU - Lee,Woong-Hee, AU - Chae,Seok-June, AU - Nahm,Sahn, Y1 - 2019/12/20/ PY - 2019/12/11/pubmed PY - 2019/12/11/medline PY - 2019/12/11/entrez KW - artificial synapse KW - conductance modulation linearity KW - copper ions doping KW - neuromorphic device KW - oxygen vacancy filaments KW - potassium niobate memristors SP - 1069 EP - 1077 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 12 IS - 1 N2 - The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/31820625/Improvement_of_Conductance_Modulation_Linearity_in_a_Cu2+_Doped_KNbO3_Memristor_through_the_Increase_of_the_Number_of_Oxygen_Vacancies_ L2 - https://dx.doi.org/10.1021/acsami.9b18794 DB - PRIME DP - Unbound Medicine ER -
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